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Emissionsmikroskopische Messung der Ortsverteilung von 20 keV-Elektronen nach Streuung in dünnen Al- und Ge-Aufdampfschichten

Emission microscopical measurement of the lateral widening of a 20-keV electron beam due to scattering in evaporated films of Al and Ge

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Zeitschrift für Physik B Condensed Matter

Abstract

Electrons incident on a thin film are displaced laterally when leaving the target by elastic and inelastic scattering. The widening of the current density distribution of an electron beam with an initial energy of 19.5 keV and an initial Gaussian distribution with a half width of about 0.6 microns by plural and multiple scattering as well as in the region of complete diffusion (corresponding to mass thicknesses ranging from 40–500 µg/cm2) is measured for evaporated films of Al and Ge. From these results the increase in half width of an infinitely fine primary electron beam (δ-function response) is computed and plotted. In order to measure the current density distribution of the scattered electrons it is converted to an equivalent distribution of secondaries using a cathode lens image converter. These distributions are magnified and scanned electronically or recorded photographically.

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  1. Institut für Angewandte Physik, Universität Tübingen, Auf der Morgenstelle, D-7400, Tübingen, Bundesrepublik Deutschland

    F. Hasselbach

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  1. F. Hasselbach
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Hasselbach, F. Emissionsmikroskopische Messung der Ortsverteilung von 20 keV-Elektronen nach Streuung in dünnen Al- und Ge-Aufdampfschichten. Z Physik B 22, 151–159 (1975). https://doi.org/10.1007/BF01322359

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  • DOI: https://doi.org/10.1007/BF01322359

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