Abstract
Al-films, evaporated at room temperature under different oxygen partial pressures, were irradiated with self-ions (500 keV, Al++) at low temperature (<7 K). The observed increase of the resistivity and of the superconducting transition temperatureT c depends strongly on the oxygen contentc 0 present in the layers. A qualitative different behaviour of the above quantities was found for different fluence ranges of the bombarding ions. For high fluences in all cases an oxygen stabilized disorder state was obtained with correspondingT c-increases betweenΔT c=0.2 K for the purest films (c 0≦0.5 at %) andΔT c =1.2 K for films with 〈c 0〉=40 at %. The annealing behaviour of the irradiated films is also dependent on the oxygen contentc 0.
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Ziemann, P., Meyer, O., Heim, G. et al. Low temperature self-ion irradiation of pure and granular aluminium-films. Z Physik B 35, 141–149 (1979). https://doi.org/10.1007/BF01321240
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DOI: https://doi.org/10.1007/BF01321240