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Optoelectrical investigations on MOS-sandwiches at low temperatures

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Zeitschrift für Physik B Condensed Matter

Abstract

MOS-structures are irradiated with light of energy from 1.5 to 6 eV at different temperatures (300, 77, 12 K) while the resulting photocurrent is measured. At high photon energies (hv>4 eV) the threshold energy and the scattering mean free path for electrons at the Si — SiO2-interface are determined. They are independent from temperature. At low photon energies (hv<3 eV) electrons are released from traps with energy levels 1.2 and 1.9 eV below the Si-conduction band. The trap concentration is 4.8 ⋅ 1013 cm−3. The capture cross section is measured in a rather direct way. The temperature and electrical field dependence of this cross section is explained by a trapping model.

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Authors and Affiliations

  1. Institut für Naturwissenschaftlich-Technische Trendanalysen, D-2301, Stohl, Federal Republic of Germany

    Klaus Reimann & Dietrich Onnasch

  2. Reine und Angewandte Kernphysik, Universität Kiel, Kiel, West Germany

    Klaus Reimann & Dietrich Onnasch

Authors
  1. Klaus Reimann
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  2. Dietrich Onnasch
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Reimann, K., Onnasch, D. Optoelectrical investigations on MOS-sandwiches at low temperatures. Z Physik B 23, 239–244 (1976). https://doi.org/10.1007/BF01318965

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  • DOI: https://doi.org/10.1007/BF01318965

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