Abstract
Polarised β emitting12B nuclei were recoil implanted into single crystalline vanadium atT=305 K. β radiation detected nuclear magnetic resonance measurements showed that two implanation sites occur simultaneously which were identified as the substitutional site and an interstitial site with axial symmetry. Extensive cross-relaxation measurements were performed on12B in both lattice positions. By this means the interstitial site could be identified as the octahedral one. The impurity induced electric field gradients at nearest and at next nearest51V neighbours about12B could be determined for both implantation sites.
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Ittermann, B., Bürkmann, K., Diehl, E. et al. Lattice locations and electric field gradients of boron implanted into vanadium. Z. Physik B - Condensed Matter 91, 7–19 (1993). https://doi.org/10.1007/BF01316702
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DOI: https://doi.org/10.1007/BF01316702