Abstract
It is shown that the nonequilibrium electron distributions of a lasing semiconductor can be calculated from a linearized Boltzmann equation for the intraband Coulombcollision rate. A successive expansion for small momentum transfer yields an integro-differential equation, whose differential part is the usual Fokker-Planck equation. The additional integral part assures the conservation of the total momentum and energy of the electron gas. A formal solution of the resulting kinetic equation is given from which one can calculate the hole burned into the electron distribution by the laser field.
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References
As an introduction see e.g. Haug, H.. Koch, S.W.: Quantum theory of the optical and electronical properties of semiconductors. Singapore. World Scientific 1990
Oudar, I., Hulin, D., Migus, A., Antonetti, A., Alexandre, F.: Phys. Rev. Lett.55, 2074 (1985)
Goodnick, S.M., Lugli, P.: Phys. Rev. Lett.37, 2578 (1988)
Bailey, D.W., Stanton, C.J., Hess, K.: Phys. Rev. B42, 3423 (1990)
Henneberger, K., Haug, H.: Phys. Rev. B38, 9759 (1988)
See e.g. Landau, L.D., Lifshitz, E.M.: Theoretical physics. Vol. 10, New York: Pergamon Press 1981
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Haug, H., Henneberger, K. The kinetics of hole-burning in semiconductor lasers. Z. Physik B - Condensed Matter 83, 447–451 (1991). https://doi.org/10.1007/BF01313416
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DOI: https://doi.org/10.1007/BF01313416