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Tunneling density of states of the Kondo superconductor (La1−x Ce x )Al2

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Zeitschrift für Physik B Condensed Matter

Abstract

Tunneling measurements on (La1−x Ce x )Al2 single crystals (x=0; 0.001; 0.002) were performed at 0.1 K. Heavily dopedp-type GaAs/Zn acts as normal conducting counterelectrode where the Schottky-barrier provides the insulating layer for tunneling. Contact between counterelectrode and sample surface is not made before cooling down to 1 K. Contamined surface layers can be pierced mechanically at 0.1 K. The extremely gapless behaviour agrees with an impurity band positiony 0<0.8 for localized exited states, although no detailed structure can be resolved.

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Authors and Affiliations

  1. I. Physikalisches Institut, Universität Göttingen, Bunsenstraße 9, D-3400, Göttingen, Federal Republic of Germany

    G. Beuermann

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  1. G. Beuermann
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Beuermann, G. Tunneling density of states of the Kondo superconductor (La1−x Ce x )Al2 . Z Physik B 28, 201–205 (1977). https://doi.org/10.1007/BF01313042

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  • DOI: https://doi.org/10.1007/BF01313042

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