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The Hall effect in quench-condensed Ti1-x V x thin films

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Zeitschrift für Physik B Condensed Matter

Abstract

Measurements of the Hall coefficient of as quenched (amorphous) and annealed (polycrystalline) Ti−V alloy films are reported. The Hall coefficient is positive for both amorphous and polycrystalline films. The electrical resistivity for the as quenched samples is large (≃190μΩ cm) and relatively independent of alloy concentration.

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Author notes

  1. Yin Bo

    Present address: Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing, China

  2. D. G. Naugle

    Present address: Universität (TH), D-7500, Karlsruhe, FRG

  3. V. M. Nicoli

    Present address: General Dynamics, Pomona Division, P.O. Box 2507, 91769, Pomona, CA, USA

Authors and Affiliations

  1. Physics Department, Texas A&M University, 77843, College Station, Texas, USA

    B. Bandyopadhyay, P. Watson, Yin Bo, D. G. Naugle & V. M. Nicoli

Authors
  1. B. Bandyopadhyay
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  2. P. Watson
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  3. Yin Bo
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  4. D. G. Naugle
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  5. V. M. Nicoli
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Bandyopadhyay, B., Watson, P., Bo, Y. et al. The Hall effect in quench-condensed Ti1-x V x thin films. Z. Physik B - Condensed Matter 63, 207–211 (1986). https://doi.org/10.1007/BF01309241

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  • DOI: https://doi.org/10.1007/BF01309241

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