Abstract
A rigorous method is presented describing the coupling between an exciton polariton in a halfspace semiconductor and the external driving field. The method is based on density matrix theory. It allows to consider realistic electron-hole interactions, spatial dispersion and extrinsic surface potentials. Without invoking additional boundary conditions or an artificial subdivision of the semiconductor it is shown that the influence of the surface can be isolated from the bulk behaviour. This is accomplished by a symmetric continuation of the restricted configuration space to bulk geometry inspired by the image source method in electrostatics. As a demonstration the solution is worked out for a simplified polariton model. The results are compared with other theories and with experimental reflection spectra.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Balslev, I.: Comments Cond. Mat. Phys.13, 21 (1987)
Hopfield, J.J.: Phys. Rev.112, 1555 (1958)
Birman, J.L.: Electrodynamic and non-local optical effects mediated by exciton polaritons. In: Rashba, E.I., Sturge, M.D. (eds.). Excitons, Modern problems in condensed matter sciences. Vol. 2 Amsterdam: North-Holland 1982
D'Andrea, A., Del Sole, R.: Phys. Rev. B38, 1197 (1988)
Axt, V.M., Stahl, A.: Solid State Commun.77, 189 (1991)
Pekar, S.I. [translation]: Sov. Phys. JETP6, 785; and34, 813 (1958)
Hopfield, J.J., Thomas, D.G.: Phys. Rev.132 2, 563 (1963)
Birman, J.L., Sein, J.J.: Phys. Rev. B6 6, 2482 (1972)
Ting, C.-S., Frankel, M.J., Birman, J.L.: Solid State Commun.17, 1285 (1975)
Huhn, W., Stahl, A.: Phys. Status Solidi B124, 167 (1984)
Hostler, L.C.: J. Math. Phys.5, 591 (1964); ibid. J. Math. Phys.11, 2966 (1970)
Mattis, D.C., Beni, G.: Phys. Rev. B18, 3816 (1978). This paper for the first time to our knowledge uses a symmetrically continued potential likeV +. The authors discuss the simplified model used in Sect. 4 with the additional assumption of equal electron and hole masses. The special symmetry (z,Z)h=(Z,z) leads to an analytic solution of the exciton Schrödinger-equation in a slab of arbitrary thickness
Stahl, A.: Phys. Status Solidi B94, 221 (1979)
Czajkowski, G., Chen, Y., Schillak, P.: Nuovo Cimento D11, 839 (1989)
Stahl, A., Balslev, I.: Electrodynamics of the semiconductor band edge. Springer Tracts in Modern Physics, Stahl, A., Balslev, J. (eds.). Vol. 110. Berlin, Heidelberg, New York: Springer 1987
Sell, D.D., Stokowski, S.E., Dingle, R., Di Lorenzo, J.V.: Phys. Rev. B7, 4568 (1973)