Abstract
An experimental configuration based on gated, double boundary GaAs/AlGaAs devices provides the first demonstration of dual distinct, tunable Hall resistances in the same sample over the weak- and strongmagnetic field limits, including the simultaneous observability of dual quantized Hall effects of dissimilar filling factors. These experiments suggest that the ordinary Hall resistance examined in experiment is essentially a topological resistance determined by connectivity, which need not reflect all “local” values of the off-diagonal resistivity, θ M ρ xy .
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Mani, R.G., von Klitzing, K. Realization of dual, tunable, ordinary- and quantized-Hall resistances in doubly connected GaAs/AlGaAs heterostructures. Z. Physik B - Condensed Matter 92, 335–339 (1993). https://doi.org/10.1007/BF01308751
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DOI: https://doi.org/10.1007/BF01308751