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Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf)

Abstract

The new class of intermetallic compounds RNiSn(R=Ti,Zr,Hf) may be characterised by the presence of an ordered sublattice of Ni atom vacancies in comparison with normal metals RNi2Sn with no Ni vacancies. We report unusual transport and optical properties of the RNiSn system. The electrical resistivity of RNiSn is very high (3<p<100) mOhm*cm; the temperature coefficient of resistivity (TCR) is negative and strongly dependent on the annealing conditions. For some samples ZrNiSn and for a single crystal of TiNiSn the resistivity can be described by the Mott's law at temperatures 0.1<T<20 K. A phase transition nearT=100 K without change of crystal structure was deduced from Hall effect data and the temperature dependence of the lattice constant. Preliminary data on transport phenomena in RPtSn and RPdSn(R=Ti,Zr,Hf) compounds are also reported. The unusual properties of RNiSn system might be related to a gap of the electron spectrum near the Fermi energy.

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Aliev, F.G., Brandt, N.B., Moshchalkov, V.V. et al. Gap at the Fermi level in the intermetallic vacancy system RBiSn(R=Ti,Zr,Hf). Z. Physik B - Condensed Matter 75, 167–171 (1989). https://doi.org/10.1007/BF01307996

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Keywords

  • Phase Transition
  • Electrical Resistivity
  • Fermi Level
  • Intermetallic Compound
  • Electron Spectrum