Abstract
The influence of lattice disorder varied by low temperature irradiation with 20 MeV32S-ions and subsequent isochronal thermal annealing on Hall-effectR H (T), resistivityp(T) and superconducting critical temperatureT c of thin films of the Chevrel-phase PbMo6S8 is reported. It is found that the well known, unusual sensitivity ofT c is correlated with drastic changes of normal state transport properties e.g.R H (T) andp(T). In the low fluence regime (Φ≦6·1013 cm−2,T c ≧2 K) annealing leads to a monotonous restoration of the initial properties with the main recovery occurring at temperatures as low as 500 K. Contrary to this, annealing of highly disordered samples (Φ≈1015 cm−2) creates semiconductor-like conduction behavior. This manifests itself by a strong increase of the electrical resistivity with decreasing temperature which becomes more pronounced at higher annealing temperaturesT A . AfterT A =800 K the resistivityp(15K) is enhanced by more than a factor of 1000 withp(15K)/p(280 K)=210 compared to as irradiated. Further annealing at 900 K and 1000K results in the reappearance of metallicp(T)-behavior and superconductivity (T c >10K). The observed effects can be understood by systematic changes of the electronic density of states consistent with an earlier proposed defect model.
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References
Chevrel, R., Sergent, M., Prigent, J.: J. Solid State Chem.3, 515 (1971)
Espelund, A.: Acta Chem. Scand.21, 839 (1967)
Fischer, Φ. Appl. Phys.16, 1 (1978)
see e.g. Superconductivity in Ternary Compounds I+II. Fischer, Φ, Maple, M.B. (eds). Berlin Heidelberg New York: Springer 1982
Perrin, A., Sergent, M., Fischer, Φ. Mater. Res. Bull.13, 259 (1978)
Yvon, K., Paoli, A.: Solid State Commun.24, 41 (1977)
Mattheis, L.F., Fong, C.Y.. Phys. Rev.B15, 1760 (1977)
Jarlborg, T., Freemann, A.J.: Phys. Rev. Lett.44, 178 (1980)
Anderson, O.K., Klose, W., Nohl, H.: Phys. Rev.B17, 1209 (1978); Nohl, H., Klose, W., Anderson, O.K.: In Ref. 4, Vol. I, p. 165
Bullet, D.W.: Phys. Rev. Lett.39, 664 (1977)
Bader, S.O., Knapp, G.S., Sinha, S.K., Schweiss, P., Renker, B.: Phys. Rev. Lett.37, 344 (1976)
Schweiss, P., Renker, B., Suck, J.B.: J. Phys. (Paris)6, 356 (1978)
Matthias, B.T., Marezio, M., Corenzwit, E., Cooper, A.S., Barz H.E.: Science175, 1465 (1972)
Muller, J.: Rep. Prog. Phys.43, 641 (1980)
Okuda, K., Kitagawa, M., Sakakibara, T., Date, M.: J. Phys. Soc. Jpn.48, 212 (1983)
Odermatt, R., Fischer, Φ, Jones, H., Bongi, G.: J. Phys. C7, L13 (1974); Fischer, Φ., Jones, H., Bongi, G., Sergent, M., Chevrel, R.: J. Phys. C7, L450 (1974)
Foner, S., McNiff, E.J., Alexander, E.J.: Phys. Lett.49A, 269 (1974); Foner, S., McNiff, E.J., Shelton, R.N., McCallum, R.W., Maple, M.B.: Phys. Lett.57A, 345 (1976)
Seeber, B., Rossel, C., Fischer, Φ: In: Proceedings of the International Conference on Ternary Superconductors. Shenoy, G.K., Dunlap, B.D., Fradin, F.Y. (eds), p. 119. New York: North Holland 1981; Seeber, B., Rossel, C., Fischer, Φ., Glätzle, W.: IEEE Trans. Magn. MAG19, 402 (1983)
Schweedler, A.R., Snead, C.L., Newkirk, L., Valencia, F., Geballe, T.H., Swall, R.H., Matthias, B.T., Corenzwit E.: In: Proceedings of the International Conference on Radiation Effects and Tritium Technology for Fusion Reactors. Watson, J.S., Nissen, S.W. (eds.), p. 422. Virginia: Springfield USA 1976
Brown, B.S., Hafstrom, J.W., Klippert, T.E.: J. Appl. Phys.48, 1759 (1977)
Davidov, S.A., Archinov, W.E., Woronin, W.I., Goshitzkii, F.N.: ΦMM 55, 931 (1983)
Alekseevskii, N.E., Mitin, A.V., Samosynk, V.N., Firsov, V.I.: J. Eksp. Teor. Fiz.85, 1092 (1938)
Adrian, H., Hertel, G., Bieger, J., Saemann-Ischenko, G., Söldner, L.: Physica107B, 647 (1981)
Hertel, G., Adrian, H., Bieger, J., Nölscher, C., Söldner, L.I, Saemann-Ischenko, G.: Phys. Rev.B27, 212 (1983)
Adrian, H., Pfirsch, F., Behrle, R., Saemann-Ischenko, G.: In: Proceedings of the IVth International Conference on Superconductivity ind-andf-Band Metals. Buckel, W., Weber, W.: (eds.), p. 193, Karlsruhe: KFZ Karlsruhe, 1982
Söldner, L.: Diploma-thesis Universität Erlangen-Nürnberg 1980 unpublished
Adrian, H., Ischenko, G., Lehmann, M., Müller, P., Braun, H., Linker, G.: J. Less Common Metals62, 99 (1978)
Woollam, J.A., Alterowitz, S.A., Haughland, E.J.: Phys. Lett.68A, 122 (1978)
Faber, T.E., Ziman, J.M.: Philos. Mag.11, 153 (1965)
Belitz, D., Götze, W.: J. Phys. C15, 981 (1982)
Belitz, D., Schumacher, W.: J. Phys. C16, 913 (1983)
Orlando, T.P., McNiff Jr., E.J., Foner, S., Beasley, M.R.: Phys. Rev. B19, 4545 (1979)
Lachal, B., Junod, A., Muller, J.: J. Low Temp. Phys.55, 195 (1984)
McMillan, W.L., Phys. Rev.167, 331 (1968)
Shelton, R.N., Lawson, A.C., Johnston, D.C.: Mater. Res. Bull.10, 297 (1975); Shelton, R.N.: Thesis, San Diego (La Jolla: University of California 1975
Junod, A., Baillif, R., Seeber, B., Fischer, Φ, Muller, J.: In: Proceedings of the XVIIth International Conference on Low Temperature PhysicsLT17, (Karlsruhe, 1984) Eckern, U., Schmid, A., Weber, W., Wühl, H. (eds), Amsterdam: North-Holland 1984
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Adrian, G., Adrian, H. Variation of electronic properties and evidence for a reversible defect induced metal to semiconductor transition in PbMo6S8 observed by ion irradiation and subsequent annealing of thin films. Z. Physik B - Condensed Matter 67, 75–87 (1987). https://doi.org/10.1007/BF01307310
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DOI: https://doi.org/10.1007/BF01307310