Abstract
The spin disorder resistivity for thes-f Hamiltonian with an additional Coulomb interaction between conduction electrons is calculated. The many body Hamiltonian is replaced by a four component alloy-Hamiltonian with temperatureT- and band-fillingn-dependent concentrations of the constituents. A self-consistent CPA-theory for conductivity and spin disorder resistivity is applied and numerically evaluated for different temperatures and parameters of the model Hamiltonian. Analytical formulae for the spin disorder resistivity are derived for two limiting cases. These results exhibit a strong dependence on the band-fillingn and the structure of the Bloch density of states near the chemical potential μ. A comparison with other theories and experimental data is presented.
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Borgiel, W., Nolting, W. & Borstel, G. Electrical resistivity for thes-fmodel within the alloy analogy approximation (CPA). Z. Physik B - Condensed Matter 67, 349–355 (1987). https://doi.org/10.1007/BF01307259
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DOI: https://doi.org/10.1007/BF01307259