Abstract
We report EXAFS experiments on 2 MeV electron irradiated Al(Zn) crystals. During irradiation at 80 K the Al interstitials are mobile and recombine with vacancies or are trapped by the Zn solutes. Due to the formation of the interstitial-solute complexes we observed a damping of the EXAFS oscillations. Three different methods are used to analyse the EXAFS data after irradiation and after annealing at 300 K. All three methods yield a new nearest neighbour distance (defect distance) of (2.44±0.05) Å after irradiation due to the trapping of an interstitial by the solute. Further analysis and model calculations demonstrate that the Zn atom is located at the octahedral interstitial site after irradiation. In addition to the nearest defect distance of 2.44 Å we also observe a next nearest defect distance of (3.59±0.09) Å.
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Bolze, T., Peisl, J. EXAFS investigation on electron irradiated dilute Al(Zn). Z. Physik B - Condensed Matter 62, 9–14 (1985). https://doi.org/10.1007/BF01303730
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DOI: https://doi.org/10.1007/BF01303730