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Production and properties of heterojunctions on A ZnSe, Ge, GaAs, GaP base

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Authors and Affiliations

  1. Lensovet Leningrad Technological Institute, USSR

    V. A. Ivanov, K. K. Murav'eva, I. P. Kalinkin & D. A. Sakseev

Authors
  1. V. A. Ivanov
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  2. K. K. Murav'eva
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  3. I. P. Kalinkin
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  4. D. A. Sakseev
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 82–87, February, 1977.

The authors are grateful to Docent A. V. Simashkevich for providing the possibility of making electrical measurements of heterojunctions.

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Ivanov, V.A., Murav'eva, K.K., Kalinkin, I.P. et al. Production and properties of heterojunctions on A ZnSe, Ge, GaAs, GaP base. Soviet Physics Journal 20, 205–208 (1977). https://doi.org/10.1007/BF01297386

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  • DOI: https://doi.org/10.1007/BF01297386

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