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Radiation-induced defects in amorphous Pd80Si20

  • Published:
Zeitschrift für Physik B Condensed Matter

Abstract

Irradiation of the metallic glass Pd80Si20 with high energy Ar-ions at low temperatures resulted in electrical resistance increases of about 5% at a measuring temperature of 10 K after fluences of 3·1015 Ar/cm2 indicating that defects were created by radiation damage. Annealing experiments were performed up to 150°C showing a smooth recovery throughout the whole temperature range.

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Author notes

  1. G. Vogl

    Present address: Freie Universität Berlin, Germany

Authors and Affiliations

  1. Bereich Kern- und Strahlenphysik, Hahn-Meitner-Institut für Kernforschung Berlin GmbH, Glienicker Straße 100, D-1000, Berlin 39, Germany

    G. Schumacher, S. Klaumünzer, S. Rentzsch & G. Vogl

Authors
  1. G. Schumacher
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  2. S. Klaumünzer
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  3. S. Rentzsch
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  4. G. Vogl
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Schumacher, G., Klaumünzer, S., Rentzsch, S. et al. Radiation-induced defects in amorphous Pd80Si20 . Z. Physik B - Condensed Matter 40, 19–21 (1980). https://doi.org/10.1007/BF01295065

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  • DOI: https://doi.org/10.1007/BF01295065

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