Abstract
Al-films were prepared by quench-condensation from Al2O3-crucibles and W-boats, respectively and irradiated with 230 keV Al+-selfions at low temperatures (<15 K). Forsmall fluences (Φ<5·1015 cm−2) the irradiation induced changes of the superconducting transition temperatureT c and the resistivity ρ strongly depend on the chemical form of the oxygen incorporated into the films by the different preparation techniques. Forhigh fluences (Φ>1016 cm−2) the behavior of the irradiated films is determined only by the integral oxygen content of the layers. The results are discussed qualitatively taking into account different physical processes during irradiation.
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Nittmann, M., Ziemann, P. & Buckel, W. Low temperature selfion irradiation of quench-condensed aluminium-films. Z. Physik B - Condensed Matter 41, 211–216 (1981). https://doi.org/10.1007/BF01294424
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DOI: https://doi.org/10.1007/BF01294424