Abstract
An improved mean field theory, the reaction field approximation is applied to a Heisenberg paramagnetic thin film. The transformation to “normal coordinates”, in some aspects similar to that used in the spin wave theory of thin films, is, as well as the corresponding boundary conditions, temperature dependent. After calculating the susceptibility the existence of a phase transition is discussed for an ideal film as well as for a film with quenched randomness.
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Work partly supported by Alexander von Humboldt Stiftung, Federal Republic of Germany
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Scherer, C., Wachniewski, A. Reaction field approximation for Heisenberg paramagnetic thin film. Z. Physik B - Condensed Matter 45, 93–97 (1981). https://doi.org/10.1007/BF01293321
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DOI: https://doi.org/10.1007/BF01293321