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On the two-dimensionality of many-body effects in surface quantum states of Si-MOSFETs

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Zeitschrift für Physik B Condensed Matter

Abstract

We investigate the contributions of higher subbands to the self-energy of quasiparticles inn-channel inversion layers, if the electric gate field and an applied magnetic field both have the (001)-direction. The modification of the screened Coulomb interaction by virtual transitions of electrons from the lowest subband to higher subbands is calculated. For typical channel widths, at low temperatures and high magnetic fields (kTħω c ) the influence of the higher subbands on the temperature-dependent enhancement of spin splitting by many-body effects turns out to be small. Therefore a quasi two-dimensional treatment of the electron-electron interaction is indeed justified under the indicated circumstances, and no theoretical reason is seen for not interpreting magnetoconductivity experiments on the basis of an enhancedg-factor.

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Rauh, H., Kümmel, R. On the two-dimensionality of many-body effects in surface quantum states of Si-MOSFETs. Z. Physik B - Condensed Matter 39, 219–226 (1980). https://doi.org/10.1007/BF01292666

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