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Electron-phonon interaction inP-doped silicon at low temperatures

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Zeitschrift für Physik B Condensed Matter

Abstract

In this present work, we explain the thermal conductivity results ofP doped silicon for impurity concentration 4.7×1017 and 1.0×1018 cm−3 by applying the theory of scattering of phonons by electrons in the mixed state i.e. both in the localised state and in the metallic state. Using Mikoshiba's ‘inhomogeneity model’ we calculated the number of electrons in the bound region and in the conduction band region and using the relaxation rates of both bound electron-phonon scattering and Ziman-Kosarev theory of free electron-phonon scattering, we explain the thermal conductivity values from 2 to 40 K. The values of density-of-states effective mass and dilatation deformation potential are found to be in agreement with the experimental values for silicon, for the electron concentration in the conduction band. We have also taken into account the effect of impurity scattering due to doped impurities, along with isotope scattering.

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Authors and Affiliations

  1. Physics Department, Banaras Hindu University Varanasi, Varanasi, India

    V. Radhakrishnan & P. C. Sharma

  2. Institut für Theoretische Physik, Universität Stuttgart, Pfaffenwaldring 57, D-7000, Stuttgart, Germany

    M. Singh (Alexander von Humboldt Fellow)

Authors
  1. V. Radhakrishnan
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  2. P. C. Sharma
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  3. M. Singh
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Radhakrishnan, V., Sharma, P.C. & Singh, M. Electron-phonon interaction inP-doped silicon at low temperatures. Z. Physik B - Condensed Matter 39, 15–19 (1980). https://doi.org/10.1007/BF01292632

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  • DOI: https://doi.org/10.1007/BF01292632

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