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Influence of oxidation on the destruction of self-bonded silicon carbide

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Conclusions

The strength of self-bonded SiC in air at 700°C and above is lower than in inert medium. This is connected with the development of defects in the surface layer of the specimens of the materials studied as a result of oxidation.

To improve the mechanical characteristics of the material it is necessary to reduce the concentration in it if impurities, and the size of the inclusions of free silicon.

During heating in air to temperatures above 1300°C processes of mass transfer occur through the gas phase into the cracks, coming out onto the surface of the material.

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Authors and Affiliations

  1. Institute of Strength Problems, Academy of Sciences of the Ukrainian SSR, USSR

    G. A. Gogotsi, Yu. G. Gogotsi, D. Yu. Ostrovoi & O. V. Ivashchenko

Authors
  1. G. A. Gogotsi
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  2. Yu. G. Gogotsi
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  3. D. Yu. Ostrovoi
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  4. O. V. Ivashchenko
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Translated from Ogneupory, No. 2, pp. 19–24, February, 1989.

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Gogotsi, G.A., Gogotsi, Y.G., Ostrovoi, D.Y. et al. Influence of oxidation on the destruction of self-bonded silicon carbide. Refractories 30, 84–90 (1989). https://doi.org/10.1007/BF01292547

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  • DOI: https://doi.org/10.1007/BF01292547

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