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Silicon transformers for concerns in the refractories industry

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Refractories Aims and scope

Summary

Tests on transforming devices with silicon diodes and triodes at the Chasov-Yar Refractories Combine showed the following advantages: significant reduction in the weight and dimensions; reduction in the loss of energy during transforming; convenience of use and ease of control; the possibility of placing them close to the equipment for which they are designed.

The extensive introduction of the new semiconductor techniques will help to improve the conditions of operating manufacturing equipment in refractories plants.

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Literature cited

  1. I. L. Kaganov, Electronic and Ionic Transformers,part III, Circuits for supplying and controlling ionic apparatus,Gosénergoizdat,(in Russian) (1956).

  2. A. A. Bulgakov, Electronic Devices for Automatic Control, Gosénergoizdat, (in Russian) (1958).

  3. S. A. Zakharov and B. D. Baryshnikov, Ogneupory, No. 12 (1961).

  4. N. G. Dobrokhotov, Semiconductor apparatus and its use. Soviet Radio, 961, No. 7.

  5. Semiconductor control valves, Collection of papers, Gosénergoizdat (1962).

  6. Semiconductor Rectifiers. Material of the All Union Conference on the use of semi-conductor units in industry. TsBTI, NII, Electroproma (1959).

  7. The use of power semiconducting rectifiers in industrial concerns and transport. Moscow Scientific Technical Propaganda Press. Coll., 1–3 (1959).

  8. Reliability of rectifying devices with KUV. Express Information VIN ITI Acad. Sci., USSR, Series “Electronics”, Abstract No. 209 (1962).

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Authors and Affiliations

  1. Moscow V. V. Kuibyshev Engineering Building Institute, USSR

    P. A. Sofronov & M. I. Kraitsberg

  2. Chasov Yar Refractories Combine, USSR

    I. I. Myl'nikov & B. V. Smirnov

Authors
  1. P. A. Sofronov
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  2. M. I. Kraitsberg
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  3. I. I. Myl'nikov
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  4. B. V. Smirnov
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Sofronov, P.A., Kraitsberg, M.I., Myl'nikov, I.I. et al. Silicon transformers for concerns in the refractories industry. Refractories 5, 202–205 (1964). https://doi.org/10.1007/BF01287585

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  • DOI: https://doi.org/10.1007/BF01287585

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