Abstract
Approximate expressions are obtained for calculations of the time characteristics of fusion and recrystallization, recrystallization rate, and depth to which the material fuses upon laser annealing of semiconductors. The expressions obtained may be used for selection of processing regimes.
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 49, No. 1, pp. 132–136, July, 1985.
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Osered'ko, S.A. Calculation of phase transition dynamics upon laser irradiation of semiconductors. Journal of Engineering Physics 49, 861–864 (1985). https://doi.org/10.1007/BF01276533
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DOI: https://doi.org/10.1007/BF01276533