Abstract
Silicon Carbide (SiC) and SiC with free silicon [SiC(Si)] thin films were prepared by chemical vapor deposition (CVD) using a CH3SiCl3-H2-Ar gas mixture at a temperature of 1223 K. Afterwards these layers were gas nitrided in an ammonia-hydrogen-argon mixture at 1273 K. The solid product is an extremely thin film of silicon nitride on SiC or SiC(Si)-basic layers. These ultra thin silicon nitride films were investigated by glow discharge optical spectroscopy (GDOS) and x-ray photoelectron spectroscopy (XPS). The thickness of the layers was determined to a maximum value of 30 nm.
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Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday
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Neuhäuser, J., Plänitz, H. & Wagner, W. Production and characterization of nitrided CVD-SiC films. Mikrochim Acta 125, 293–296 (1997). https://doi.org/10.1007/BF01246200
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DOI: https://doi.org/10.1007/BF01246200