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Microanalytical characterization of inclusions in Cr-doped LEC GaAs

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Abstract

Inclusions of different morphologies were observed by Infrared (IR) microscopy and Scanning Electron Microscopy (SEM) in the last-to-freeze region of a Cr-doped GaAs single crystal grown by the Liquid Encapsulated Czochralski (LEC) technique.

Energy dispersive X-ray analysis (EDX) revealed that these inclusions consist of different chromium compounds. Compositions correspond to the following binary phases and compounds: CrGa4, Cr3As2, Cr2As3. Additionally, the quasi-ternary system of Cr3Ga4 + CrAs has been found. Sometimes, additional carbon particles have been detected within the heterogeneous inclusions. The possible generation mechanism of inclusions under supercritical growth conditions is discussed.

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Authors and Affiliations

  1. Institut für Kristallzüchtung im Forschungsverbund Berlin e.V., Rudower Chaussee 6, D-12489, Berlin, Federal Republic of Germany

    Jörg Donecker, Marina Seifert & Peter Rudolph

  2. Gesellschaft zur Förderung angewandter Optik, Optoelektronik, Quantenelektronik und Spektroskopie e.V., Rudower Chaussee 5, D-12489, Berlin, Federal Republic of Germany

    Peter Michael Wilde

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  1. Peter Michael Wilde
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  2. Jörg Donecker
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  3. Marina Seifert
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  4. Peter Rudolph
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Dedicated to Professor Dr. rer. nat. Dr. h. c. Hubertus Nickel on the occasion of his 65th birthday

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Wilde, P.M., Donecker, J., Seifert, M. et al. Microanalytical characterization of inclusions in Cr-doped LEC GaAs. Mikrochim Acta 125, 251–256 (1997). https://doi.org/10.1007/BF01246192

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  • DOI: https://doi.org/10.1007/BF01246192

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