Skip to main content
SpringerLink
Log in

Investigation of Al diffusion in different oxide thin-film layers by SNMS/HFM method

  • Original Papers
  • Published:
Microchimica Acta Aims and scope Submit manuscript

Abstract

Depth profiles of Ga2O3/a-SiO2/Al2O3- substrate, Ga2O3/a-Si3N4/Al2O3- substrate, and Ga2O3/Al2O3 substrate thin layers were determined by the SNMS/HFM method. Al diffusion from the Al2O3 substrate was investigated after 50, and in some cases after 600 hours of heat treatment time at different temperatures (600 °C,850 °C,950 °C,1050 °C and 1150 °C). The diffusion coefficient of Al at 850 °C was found to be D Al=8.7 * 10−18 cm2/s in amorphous SiO2; D Al=1.5*10−17 cm2/s in amorphous Si3N4 and D Al=5.5* 10−16 cm2/s in Ga2O3 at 600 °C, respectively. The possible diffusion mechanism is explained in terms of the metal-oxygen bond-strengths. Although the studied materials have high resistivity at room temperature, the applied SNMS/HFM method has proven to be an efficient surface analytical tool even in these cases.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. G. V. Samsonov (ed.), TheOxide Handbook IF, Plenum, New York, 1982, pp. 128–141.

    Google Scholar 

  2. H. Oechsner,Appl. Surf. Sci. 1993,70/77, 250.

    Google Scholar 

  3. K.-H. Müller, H. Oechsner,Verfahren und Vorrichtung zur Oberflächen — und/oder der Tiefenprofilanalyse, Deutsches Patent, N ° WO 92/13268.

  4. H. Oechsner (ed.),Thin Film and Depth Profile Analysis, Springer, Berlin Heidelberg, New York Tokyo, 1984, p. 145.

    Google Scholar 

  5. H. Oechsner (ed.),Thin Film and Depth Profile Analysis, Springer, Berlin Heidelberg, New York Tokyo, 1984, p. 63.

    Google Scholar 

  6. H. Oechsner, in:Analysis of Microelectronic Materials and Devices (M. Grasserbauer, H. W. Werner, eds.), Wiley, New York, 1991, p. 493.

    Google Scholar 

  7. H. OechsnerAnal Acta 1993,283, 131.

    Google Scholar 

  8. R. Jede, H. Peters, G. Dünnebier, O. Ganschow, U. Kaiser, K. Seifert,J. Vac. Sci. Technol. 1988,A6, 2271.

    Google Scholar 

  9. O. Kubaschewski, C. B. Alcock,Metallurgical Thermochemistry, 5th Ed., Pergamon, Oxford, 1983.

    Google Scholar 

  10. R. C. Weast (ed.),CRC-Handbook of Chemistry and Physics, 63rd Ed., CRC Boca Raton, Florida, 1982–1983.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institut für Technologie- und Wissenstransfer, Lübecker Ring 2, D-59494, Soest, Federal Republic of Germany

    Hubert Paulus & Karl -Heinz Müller

  2. Siemens AG ZFE, Postfach 830953, D-81739, München, Federal Republic of Germany

    Susanne Kornely

  3. Department of Atomic Physics, Technical University of Budapest, Budafokî ût 8, H-1521, Budapest, Hungary

    Janos Giber

  4. FB Elektrische Energietechnik der Universität-GH Paderborn Abteilung Soest, Lübecker Ring 2, D-59494, Soest, Federal Republic of Germany

    Karl -Heinz Müller

Authors
  1. Hubert Paulus
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Susanne Kornely
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Janos Giber
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Karl -Heinz Müller
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday

Rights and permissions

Reprints and permissions

About this article

Cite this article

Paulus, H., Kornely, S., Giber, J. et al. Investigation of Al diffusion in different oxide thin-film layers by SNMS/HFM method. Mikrochim Acta 125, 223–227 (1997). https://doi.org/10.1007/BF01246187

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01246187

Key words

Search

Navigation