Interpretation of Auger depth profiles of thin SiC layers on Si

Abstract

Silicon carbide thin films, prepared by carbonization of Si-wafers are analysed by Auger depth profiling. The influence of atomic mixing is simulated with a Monte Carlo model. By using mixing simulations the dependence of the two mixing parameters (width of the mixing zone and recoil depth) on ion beam energy, incidence angle and ion mass can be calculated. For comparison of the simulated data with Auger measurements an Auger electron escape depth correction is necessary. The simulated and λ-corrected data of several layer structures show good qualitative agreement with Auger depth profiles of thin carbonized SiC-layers.