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Some conditions for strong asymmetric double injection in insulators and semiconductors

Einige Bedingungen für stark asymmetrische Doppelinjektion in Isolierstoffen und Halbleitern

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Contents

In this paper a space-charge transport model is studied. As a model system the planar capacitor is used. A boundary problem for space charge transport is presented. The effect of the mechanisms of carrier injection on the current-voltage characteristics is shown. It was found that the current-voltage characteristics can be strongly nonlinear.

Übersicht

Ein Modell des Transportes von Raumladungen wird untersucht. Als Modellsystem wurde ein Plattenkondensator verwendet. Randprobleme des Raumladungstranportes werden dargestellt. Der Einfluß des Injektionsmechanismus auf die Strom-Spannungs-Kennlinien wird ebenfalls angegeban. Die Untersuchungen zeigen, daß die Kennlinien starke Nichtlinearitäten aufweisen können.

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Authors and Affiliations

  1. Institute of Electrical Engineering and Technology, The Technical University of Wroclaw, Wybrzeza, St. Wyspiańskiego 27, 50-370, Wroclaw, Poland

    B. Świstacz

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  1. B. Świstacz
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Świstacz, B. Some conditions for strong asymmetric double injection in insulators and semiconductors. Electrical Engineering 78, 111–116 (1995). https://doi.org/10.1007/BF01245642

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  • DOI: https://doi.org/10.1007/BF01245642

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