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Comparison of depth profiles in SIMS by a fuzzy method

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Abstract

Automated quantitative comparison of depth-profiles recorded by SIMS based on a fuzzy difference measure has been used to characterize Sb and B implantation profiles in a marker experiment to study the diffusion of As in silicon. The variations of the concentration (intensity) measurements are described by a fuzzy set that is specified by smoothing the data with a polynomial digital filter. For each depth an individual spread as the size of variation is defined. Applications of the method enabled the influence of As-concentration and of annealing conditions on the implantation profiles of Sb and B to be quantified.

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Authors and Affiliations

  1. Department of Chemistry, Bergakademie Freiberg, Akademiestraße 6, D-O-9200, Federal Republic of Germany

    Matthias Otto

  2. Institute of Analytical Chemistry, Technical University Vienna, Getreidemarkt 9/151, A-1060, Wien, Austria

    Gerhard Stingeder, Kurt Piplits & Manfred Grasserbauer

  3. Institute of General Electrical Engineering and Electronics, Technical University Vienna, Gußhausstraße 27-29, A-1040, Wien, Austria

    Michael Heinrich

Authors
  1. Matthias Otto
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  2. Gerhard Stingeder
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  3. Kurt Piplits
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  4. Manfred Grasserbauer
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  5. Michael Heinrich
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Otto, M., Stingeder, G., Piplits, K. et al. Comparison of depth profiles in SIMS by a fuzzy method. Mikrochim Acta 106, 163–173 (1992). https://doi.org/10.1007/BF01242087

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  • DOI: https://doi.org/10.1007/BF01242087

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