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Comparison of depth resolution from a microscopically modulated Rh/C film after sputter profiling by SIMS and SNMS

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Abstract

Sputter depth profiles of an Rh/C microscopically modulated thin film (double layer thickness 7 nm) were obtained by low energy SIMS and SNMS. The depth resolution was obtained using the linear superposition of error functions at the interfaces. In optimal cases the depth resolution was shown to be of the order of 1–2 nm for both techniques.

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Authors and Affiliations

  1. Department of Chemistry, University of Antwerp (U.I.A.), Universiteitsplein 1, B-2610, Wilrijk, Belgium

    Monique Moens & Fred C. Adams

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  1. Monique Moens
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  2. Fred C. Adams
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Moens, M., Adams, F.C. Comparison of depth resolution from a microscopically modulated Rh/C film after sputter profiling by SIMS and SNMS. Mikrochim Acta 96, 3–10 (1988). https://doi.org/10.1007/BF01236088

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  • DOI: https://doi.org/10.1007/BF01236088

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