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Physical processes in breakdown of silicon monoxide film

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Abstract

At present the mechanics of breakdown of dielectric films is a topic of active discussion.

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Authors and Affiliations

  1. Tomsk Institute of Automatized Control and Radio Electronics Systems, USSR

    G. A. Vorob'ev & V. A. Mukhachev

Authors
  1. G. A. Vorob'ev
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  2. V. A. Mukhachev
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 11, pp. 36–41, November, 1972.

In conclusion the authors express gratitude to N. S. iVIukhacheva for help in conducting the experiment.

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Vorob'ev, G.A., Mukhachev, V.A. Physical processes in breakdown of silicon monoxide film. Soviet Physics Journal 15, 1563–1567 (1972). https://doi.org/10.1007/BF01231224

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  • DOI: https://doi.org/10.1007/BF01231224

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