Abstract
The solid state reaction between Ni-Cu and Cu-Ni bilayers on Si(100) has been studied using X-ray diffraction, transmission electron microscopy, Auger electron spectroscopy and sheet resistance measurements. The bilayers were produced by evaporation and annealed at temperatures between 200 and 500 °C. In the Ni-Cu sequence, a strong intermixing of silicides and a 33% reduction in the formation temperature of the NiSi2 phase compared with Ni-Si(100) was observed. When nickel was in direct contact with the silicon substrate limited intermixing and reaction of Cu was observed in the Cu-NiSi and NiSi-Si interfaces at 500 °C, due to the large grain size of the nickel silicide.
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Mattoso, N. Cu-Ni and Ni-Cu bilayers on silicon: reduction of formation temperature and phase separation. J Mater Sci 30, 3242–3247 (1995). https://doi.org/10.1007/BF01209244
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DOI: https://doi.org/10.1007/BF01209244