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Effect of fabrication conditions on the physical parameters of the base of a planar silicon diode

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References

  1. U. M. Kulish and A. P. Vyatkin, Izv. VUZ. Fizika [Soviet Physics Journal], no. 6, 1965.

  2. Yu. R. Nosov and L. T. Ramus, FTT,4, no. 12, 1962.

  3. S. A. Zaidman and L. M. Sevtyukova, Izv. VUZ. Fizika [Soviet Physics Journal], no. 4, 1965.

  4. Van Buren, Defects in Crystals [Russian translation], IIL, 1963.

  5. Yu. R. Nosov, in collection: Semiconductor Devices and Their Application [in Russian], Ya. A. Fedotov, editor, no. 4, 3, Izd. Sov. radio, 1959.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, USSR

    U. M. Kulish & S. A. Zaidman

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  1. U. M. Kulish
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  2. S. A. Zaidman
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Kulish, U.M., Zaidman, S.A. Effect of fabrication conditions on the physical parameters of the base of a planar silicon diode. Soviet Physics Journal 9, 113 (1966). https://doi.org/10.1007/BF01206515

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  • DOI: https://doi.org/10.1007/BF01206515

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