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Effects of X-rays on electrophysical properties of germanium and of germanium p-n junctions

II. Electrophysical properties of germanium under hard X-ray irradiation

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References

  1. M. A. Krivov and S. V. Malyanov, Izv. VUZ. Fizika [Soviet Physics Journal], no. 4, 156, 1965.

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  2. M. A. Blokhin, Physics of Roentegen Rays [in Russian], GITTL (2nd ed.), Moscow, 1957.

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  3. V. S. Vavilov, Effects of Radiation on Semiconductors [in Russian], Fizmatgiz, Moscow, 1963. remove entire third line

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  4. Experimental Nuclear Physics, ed. E. Segre [Russian translation], vol. 1, IL, 1961.

  5. S. M. Ryvkin, Photoelectric Phenomena in Semiconductors [in Russian], Fizmatgiz, Moscow, 1963.

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Authors and Affiliations

  1. Kuznetsov Siberian Physico-technial Institute, USSR

    M. A. Krivov & S. V. Malyanov

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  1. M. A. Krivov
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  2. S. V. Malyanov
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Krivov, M.A., Malyanov, S.V. Effects of X-rays on electrophysical properties of germanium and of germanium p-n junctions. Soviet Physics Journal 9, 49–51 (1966). https://doi.org/10.1007/BF01206493

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  • DOI: https://doi.org/10.1007/BF01206493

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