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Monte Carlo simulation of ion implantation into solids as a tool for the characterization of surface analytical reference materials

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Abstract

The physical and chemical prerequisites of ion implantation and their translation into a Monte Carlo calculation simulating the implantation process of high energy ions (300 keV) are described; calculations are extended to high dose implantation (up to 1×1018 ions cm−2) taking into consideration various effects such as matrix change during implantation, cascade mixing, sputter erosion and relaxation of the target material.

To check the suitability of such calculations for a characterization of implanted samples, the results of the calculations are compared with those obtained experimentally from implanted samples. As an example,P + is implanted into polycrystalline Al at various doses (1⋯10×1017 p + cm−2), and depth profiles are taken by AES/Ar+-sputtering.

The calculated and measured results agree better than 10% for both the depth and the concentration scale.

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  1. Institut für Spektrochemie und Angewandte Spektroskopie, Bunsen-Kirchhoff-Strasse 11, D-4600, Dortmund 1, Germany

    H. Bubert

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Bubert, H. Monte Carlo simulation of ion implantation into solids as a tool for the characterization of surface analytical reference materials. Mikrochim Acta 90, 387–406 (1986). https://doi.org/10.1007/BF01199280

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  • DOI: https://doi.org/10.1007/BF01199280

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