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Ultrashort laser-pulse annealing of hydrogenated amorphous silicon

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Abstract

Crystallization of hydrogenated amorphous silicon (a-SI:H) has been initiated using ultrashort laser-pulse train annealing. Optical microscopy, infrared absorption, Raman spectroscopy and photoluminescence measurements show that in our experiment the crystallized layer is localized on the surface and is non-epitaxial. The depth of the crystalline layer and its surface morphology are discussed. A sharp luminescence band at 0.970 eV with fine structure is found after laser annealing and is identified as a recombination center similar to irradiation induced defects in crystalline Si.

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Author notes

  1. P. H. Liang

    Present address: Academia Sinica, Shanghai Institute of Optics and Fine Mechanics, Shanghai, China

  2. C. J. Fang

    Present address: Department of Physics, University of Science and Technology of China, Beijing, China, China

  3. D. S. Jiang

    Present address: Academia Sinica, Semiconductor Institute, Beijing, China

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, D-7000, Stuttgart 80, Germany

    P. H. Liang, C. J. Fang, D. S. Jiang, P. Wagner & L. Ley

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  1. P. H. Liang
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  2. C. J. Fang
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  3. D. S. Jiang
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  4. P. Wagner
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  5. L. Ley
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Liang, P.H., Fang, C.J., Jiang, D.S. et al. Ultrashort laser-pulse annealing of hydrogenated amorphous silicon. Appl. Phys. A 26, 39–43 (1981). https://doi.org/10.1007/BF01197676

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