Abstract
The desorption of Pb from MBE-grown {100} GaAs surfaces has been investigated using modulated-beam mass spectrometry, isothermal desorption rate measurements and temperature programmed thermal desorption spectroscopy. The results are in general agreement with a model in which desorption occurs from a disperse phase which is in equilibrium with adsorbate islands. From the independence of the activation energy of desorption on coverage from <10−3 s monolayers to several tens of monolayers, single atom desorption is the probable rate limiting step. An important conclusion is that it is not possible to perform a unique analysis of temperature programmed desorption data from condensed films without prior knowledge of the dependence of the desorption activation energy on coverage.
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Whitehouse, S.B., Foxon, C.T. & Joyce, B.A. Thermal desorption spectroscopy of condensed lead films on {100} GaAs surfaces. Appl. Phys. A 26, 27–33 (1981). https://doi.org/10.1007/BF01197674
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DOI: https://doi.org/10.1007/BF01197674