Summary
Proceeding from the technological requirements for semiconductor characterization the progress and limitations of quantitative distribution analysis for B and As in silicon semiconductors by ionprobe microanalysis are presented. It is shown that by use of new instrumental technology the detection power for extreme trace analysis of dopant elements can be increased significantly and that development of suitable quantification procedures enables quantitative distribution analysis to be performed with good accuracy. The information obtained provides a basis for establishing more accurate diffusion models for highly doped materials.
Zusammenfassung
Ausgehend von den technologischen Anforderungen an die Charakterisierung von Halbleitermaterialien wurden neue Entwicklungen und deren Limitierungen in der quantitativen Verteilungsanalyse von B und As in Silizium-Halbleitern beschrieben. Es wurde gezeigt, daß der Einsatz der Ionenstrahlmikroanalyse in ihrer neuesten instrumentellen Realisierung eine wesentliche Verbesserung des Nachweisvermögens für Dotierungselemente ermöglicht und daß durch die Anwendung geeigneter Quantifizierungsmethoden eine hohe Richtigkeit der Verteilungsanalyse erzielt werden kann. Die gewonnenen Informationen dienen als Grundlage für die Entwicklung verbesserter mathematischer Modelle für die Beschreibung von Diffusionsprozessen in hochdotierten Halbleitermaterialien.
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Dedicated to Prof. Dr. Hanns Malissa on the occasion of his 60th birthday.
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Grasserbauer, M., Stingeder, G., Guerrero, E. et al. Quantitative distribution analysis for boron and arsenic in silicon-semiconductors. Mikrochim Acta 76, 469–482 (1981). https://doi.org/10.1007/BF01196965
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DOI: https://doi.org/10.1007/BF01196965