Microstructure and mechanical properties of RB-SiC/MoSi₂ composite

Abstract

Microstructure, high temperature strength and oxidation behaviour of reaction bonded silicon carbide, RB-SiC/17 wt% MoSi₂ composite prepared by infiltrating a porous RB-SiC bulk (after removal of free silicon) with molten MoSi₂ were investigated. There was good bonding between the SiC and MoSi₂ particle, without a significant reaction zone and microcracking caused by the thermal mismatch stresses. A thin (∼2 nm) layer, however, was observed at the SiC/MoSi₂ interfaces. At room temperature, the composite exhibited a bending strength of 410 MPa, which is ∼20% loss in comparison to that of RB-SiC alone (containing ∼ 10 wt% free silicon). However, the composite strength increased to a maximum of 590 MPa in the temperature range 1100 and 1200° C and dropped to 460 MPa between 1200 to 1400° C, after which the strength remained constant. The passive oxidation of the composite in dry air in the temperature range 1300 to 1400° C was found to follow the parabolic rate law with the formation of a protective layer of cristobalite on the surface.