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Mechanism of production of ultra-fine silicon carbide powder by arc plasma irradiation of silicon bulk in methane-based atmospheres

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Abstract

The mechanism of production of ultra-fine SiC powder from a silicon bulk by arc plasma irradiation in either an Ar + CH4 + H2 or an Ar + CH4 atmosphere was studied. Layer and island phases were newly formed in the silicon bulk upon irradiation, and it was revealed from scanning electron and Auger electron spectroscopy that these phases were composed of SiC. The intensity of the X-ray diffraction peaks due to the SiC phase increased with irradiation time almost in parallel to the carbon content involved in the silicon bulk. It is proposed that CH4 is dissociated in the arc plasma and dissolved in the molten silicon bulk to produce the SiC phase, the sublimation of which is mostly responsible for the production of ultra-fine SiC powder.

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Authors and Affiliations

  1. Analysis Center, Nagaoka University of Technology, Nagaoka, 940-21, Niigata, Japan

    Yasunobu Inoue

  2. Department of Mechanical Engineering, Nagaoka University of Technology, Nagaoka, 940-21, Niigata, Japan

    Yasufumi Nariki & Kohichi Tanaka

Authors
  1. Yasunobu Inoue
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  2. Yasufumi Nariki
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  3. Kohichi Tanaka
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Inoue, Y., Nariki, Y. & Tanaka, K. Mechanism of production of ultra-fine silicon carbide powder by arc plasma irradiation of silicon bulk in methane-based atmospheres. J Mater Sci 24, 3819–3823 (1989). https://doi.org/10.1007/BF01168941

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  • DOI: https://doi.org/10.1007/BF01168941

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