Skip to main content
Log in

Operation of surface-barrier silicon detectors when irradiated by 10–70 keV protons

  • Published:
Soviet Atomic Energy Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Literature Cited

  1. G. Amsel, P. Baruch, and O. Smulkowski, IRE Trans. NS-8,1, 21 (1961).

    Google Scholar 

  2. F. G. Bogdanov, M. M. Dremin, and B. P. Maksimenko, Plasma Diagnostics [in Russian], Vol. 2, Atomizdat, Moscow (1968).

    Google Scholar 

  3. N. N. Brevnov, Yu. S. Maksimov, and V. S. Tsyplenkov, At. Énerg.20, 149 (1966).

    Google Scholar 

  4. D. Dearnaley and D. Northrop, Semiconductor Counters for Nuclear Radiations [Russian translation], Mir, Moscow (1966).

    Google Scholar 

  5. V. S. Vavilov, Radiation Effects in Semiconductors [in Russian], Fizmatgiz, Moscow (1963).

    Google Scholar 

Download references

Authors

Additional information

Translated from Atomnaya Énergiya, Vol. 26, No. 3, pp. 252–256, March, 1969.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bogdanov, G.F., Maksimenko, B.P. Operation of surface-barrier silicon detectors when irradiated by 10–70 keV protons. At Energy 26, 280–283 (1969). https://doi.org/10.1007/BF01162421

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01162421

Keywords

Navigation