Abstract
Nickel plate was siliconized with a gas mixture of Si2Cl6, H2 and argon in the temperature range 400 to 900° C, and the siliconizing conditions and some of its properties were examined, Appreciable weight increase of the nickel plate was observed above 450° C, which is 200 to 300° C lower than that obtained using SiCl4 as a source of silicon. Siliconizing of the surface and the resistance to high-temperature oxidation and hot corrosion were improved, Nickel silicide layers were also obtained by the CVD process using a gas mixture of Si2Cl6, H2 and argon.
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References
D. B. Fraser, E. Kinsbron andF. Vratny, US Patent 4 362 597 (1983).
R. Gonsiorawski andK. B. Patel, UK Patent Application, GB 2107 741 (1983) (Chem. Abstr.99 (1983) 9528e).
M. Houalla, C. L. Kibby, L. Petrakis andD. M. Hercules,J. Phys. Chem.87 (1983) 3689.
H. Imamura andW. E. Wallace,ibid.83 (1979) 2009.
A. M. Leas, US Patent 4 167 615 (1979).
E. D. Dickens Jr, US Patents 3 968 064 (1976), 3 975 359 (1976).
E. Fitzer, H. J. Maeurer, W. Nowak andJ. Schlichting,Thin Solid Films64 (1979) 305.
A. M. Beltran, N. R. Lindblad andG. E. Wasielewski, US Patent 3 904 328 (1976).
A. A. Appen, N. S. Andrushchenko, I. B. Baivkovskaya andM. V. Sazonova,Fiz. Khim. Obrab. Mater.6 (1972) 51 (Chem. Abstr.78 (1973) 86625c).
K. N. Tu, E. I. Alessaudrini, W. K. Chu, H. Kroütle andJ. W. Mayer,Jpn. J. Appl. Phys.13 Suppl. 2, Part 1 (1974) 669.
T. G. Finstad, J. W. Mayer andM-A. Nicolet,Thin Solid Films51 (1978) 391.
R. Pretorius, C. L. Ramitter, S. S. Lau andM-A. Nicolet,Appl. Phys. Lett.30 (1977) 501.
J. E. E. Baylin, H. A. Atwater, D. Gupta andF. M. D'Heurle,Thin Solid Films93 (1982) 255.
A. I. Rodionov andV. A. Uskov,Izv. Vyssh. Uchebn. Zaved. Fiz.28 (1985) 78 (Chem. Abstr.102 (1985) 226315t).
B. L. Meiler,Poverkhnost4 (1985) 67 (Chem. Abstr.102 (1985) 195982b).
L. J. Chen, L. S. Hung, J. W. Mayer, J. E. E. Baglin, J. M. Nerz andD. A. Hammer,Appl. Phys. Lett,40 (1982) 595.
A. J. Gay andJ. Qaukernaat,J. Less-Common Metals40 (1975) 21.
K. Hikosaka, H. Ishiwara andS. Furukawa,J. Vac. Sci. Technol.16 (1979) 1913.
V. Yu. Petukhov, I. B. Khaibullin andM. M. Zaripov,Poverkhnost2 (1985) 104.
E. Fitzer, H. J. Maeurer, W. Nowak andJ. Schlichting,Thin Solid Films64 (1979) 305.
M. Sokolowski, A. Sololowska, E. Rolinski andA. Michalski,ibid.30 (1975) 29.
D. Itzhak, F. R. Tuler andM. Schieber,ibid.73 (1980) 379.
A. Olsen andF. R. Sale,Met. Technol.7 (1980) 494 (Chem. Abstr.94 (1981) 196446h).
K. N. Tu, G. Ottaviani, U. Gosele andH. Foll,J. Appl. Phys.54 (1983) 758.
M. Bartur andM-A. Nicolet,ibid.54 (1983) 5404.
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Motojima, S., Kohno, M. & Hattori, T. Preparation and properties of nickel silicide layers by the diffusion and CVD processes using Si2Cl6 as a source of silicon. J Mater Sci 22, 547–553 (1987). https://doi.org/10.1007/BF01160767
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DOI: https://doi.org/10.1007/BF01160767