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Nucleation and growth of gallium arsenide on silicon (111)

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Abstract

The nucleation and growth of undoped gallium arsenide (GaAs) epitaxial layers, grown by metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates were investigated by transmission electron microscopy (TEM). The initial stages of epitaxial growth are considered at high and low growth temperatures. The influence of growth time and thermal annealing on the initial stages of growth are also studied and reported.

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References

  1. A. Georgakilas, P. Panayodatos, J. Stoemenos, J.-L. Mourrain andA. Christou,J. Appl. Phys. 71 (6) (1992) 2679.

    Google Scholar 

  2. D. K. Biegelsen, F. A. Ponce, A. J. Smith andJ. C. Tramontana,J. Appl. Phys. 61 (1986) 1856.

    Google Scholar 

  3. G. M. Metze, H. K. Choi andB. Y. Tsaur,Appl. Phys. Lett. 45 (1984) 1107.

    Google Scholar 

  4. C. Choi, N. Otsuka, G. Munns, R. Houdre, H. Morkoç, S. L. Zhang, D. Levi andM. V. Klein,ibid. 50 (1987) 992.

    Google Scholar 

  5. R. Fischer, H. Morkoç, D. A. Neumann, H. Zabel, C. Choi, N. Otsuka, M. Longerbone andL. P. Ericksen,J. Appl. Phys. 60 (1986) 1640.

    Google Scholar 

  6. M. Akiyama, Y. Kawarada andK. Kaminishi,J. Cryst. Growth 68 (1984) 21.

    Google Scholar 

  7. V. Alberts, J. H. Neethling andJ. S. Vermaak,S. Afr. J. Sci. 88 (1992) 157.

    Google Scholar 

  8. Idem, Mater. Lett. 13 (1992) 65.

    Google Scholar 

  9. J. H. Neethling andV. Alberts,J. Appl. Phys. 75 (1994) in press.

  10. M. Kawabe, T. Ueda andH. Takasuzi,Jpn. J. Appl. Phys. 26 (1987) L114.

    Google Scholar 

  11. S. M. Koch, S. J. Rosner, R. Hull, G. W. Yoffe andJ. S. Harris,J. Cryst. Growth 81 (1987) 205.

    Google Scholar 

  12. G. A. Bassett andD. W. Pashley,J. Inst. Metals 87 (1959) 449.

    Google Scholar 

  13. H. Hashimoto andR. Uyeda,Acta. Cryst. 10 (1957) 143.

    Google Scholar 

  14. A. J. Donohoe andL. J. Robins,J. Cryst. Growth 17 (1972) 70.

    Google Scholar 

  15. G. A. Bassett, J. W. Menter andD. W. Pashley,Proc. Roy. Soc. A246 (1958) 345.

    Google Scholar 

  16. K. Ishida, M. Akiyama andS. Nishi,Jpn. J. Appl. Phys. 25 (1986) 288.

    Google Scholar 

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Authors and Affiliations

  1. Physics Department, Rand Afrikaans University, PO Box 524, 2006, Aucklandpark, Johannesburg, South Africa

    V. Alberts

  2. Physics Department, University of Port Elizabeth, PO Box 1600, 6000, Port Elizabeth, Republic of South Africa

    J. H. Neethling & J. S. Vermaak

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  1. V. Alberts
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  2. J. H. Neethling
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  3. J. S. Vermaak
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Alberts, V., Neethling, J.H. & Vermaak, J.S. Nucleation and growth of gallium arsenide on silicon (111). J Mater Sci 29, 2017–2024 (1994). https://doi.org/10.1007/BF01154676

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  • DOI: https://doi.org/10.1007/BF01154676

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