Preparation and characterization of in_1−xGa_xAs_yP_1−y epilayers by liquid-phase epitaxy

Abstract

In_1−x Ga _x As _y P_1−y epilayers with three different solid compositions of ln_0.73Ga_0.27As_0.60P_1.40, In_0.59Ga_0.41As_0.87P_0.13 and ln_0.53Ga_0.47As were grown on (1 0 0) InP substrate at 623° C by the step cooling technique of liquid-phase epitaxy. From the optical transmission measurements, the corresponding wavelengths of the InGaAsP epilayers were 1.30, 1.55 and 1.69 μm, respectively, which are in good agreement with those obtained from the calculations using Vegard's law. The full widths at half maximum of the photoluminescent spectra at 14 K of these layers were as low as 18.6, 22.5 and 7.9meV, respectively. The electron mobility of the InGaAsP epilayers is a function of the solid composition with the ln_0.53Ga_0.47As epilayer having the highest electron mobility. The mobility and concentration of this layer are 8,873cm²V⁻¹ sec⁻¹, 9.7×10¹⁵cm⁻³ and 22,900 cm²V⁻¹ sec⁻¹, 8.5×10¹⁵cm⁻³ at 300 and 77 K, respectively. The compensation ratio is between 2 and 5.