Pressure-induced polymorphous crystallization in bulk Si20Te80 glass
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- Asokan, S., Gopal, E.S.R. & Parthasarathy, G. J Mater Sci (1986) 21: 625. doi:10.1007/BF01145533
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The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.