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Pressure-induced polymorphous crystallization in bulk Si20Te80 glass

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Abstract

The effect of pressure on the electrical resistivity of bulk Si20Te80 glass has been studied up to a pressure of 8 GPa. A discontinuous transition occurs at a pressure of 7 GPa. The X-ray diffraction studies on the pressure quenched sample show that the high pressure phase is crystalline with hexagonal structure (c/a = 1.5). On heating, the high pressure hexagonal phase has on exothermic decomposition atT = 586 K into two crystalline phases, which are the stable phases tellurium and SiTe2 obtained by simple heating of the glass.

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Author notes

  1. E. S. R. Gopal

    Present address: Instrumentation and Services Unit, Indian Institute of Science, 560012, Bangalore, India

Authors and Affiliations

  1. Department of Physics, Indian Institute of Science, 560012, Bangalore, India

    S. Asokan & E. S. R. Gopal

  2. Instrumentation and Services Unit, Indian Institute of Science, 560012, Bangalore, India

    G. Parthasarathy

Authors
  1. S. Asokan
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  2. E. S. R. Gopal
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  3. G. Parthasarathy
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Asokan, S., Gopal, E.S.R. & Parthasarathy, G. Pressure-induced polymorphous crystallization in bulk Si20Te80 glass. J Mater Sci 21, 625–629 (1986). https://doi.org/10.1007/BF01145533

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  • DOI: https://doi.org/10.1007/BF01145533

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