Abstract
The PbS-Si (1 1 1) heterostructures were fabricated by various chemical methods. lt has been observed that uniform single and multilayer PbS films, which are mostly polycrystalline, could be prepared. Strongly oriented films have also been deposited by the Davis and Norr method. Substrate preparation prior to the deposition of the films, is found to have a more pronounced effect on the first layer, rather than on the subsequent layers. Orientation of these films is observed to change with the thickness and etchants used in this study. As film thickness increases, size defects and strain defects decrease for these heterostructures. An anisotropy is noted in domain size end strain in these films.
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Sarma, Y.S., Acharya, H.N. & Misra, N.K. PbS-Si heterojunctions: Growth and structural properties. J Mater Sci 21, 137–141 (1986). https://doi.org/10.1007/BF01144711
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DOI: https://doi.org/10.1007/BF01144711