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Chaotic conductivity oscillation in n-Type Si in high magnetic fields

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Abstract

Chaotic conductivity oscillations were observed in n-Si in a narrow freeze-out temperature range between 26 K and 34 K in a pulsed high magnetic field of about 18 T. It was found that the chaotic behaviour can be drastically influenced by the magnetic field. Period-doubling bifurcations were found in these chaotic oscillations and the routes to the chaos were determined. The attractor dimensions of the chaos converged to around 1.1 to 2.3 depending on the applied electric fields. The frequency dependence of the power spectrum of the oscillations was approximately 1/f 2.

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Authors and Affiliations

  1. Department of Electronics, Saitama University, Shimo-ohkubo, Urawa City, 338, Saitama, Japan

    K. Yamada

  2. Institute for Solid State Physics, The University of Tokyo, Roppongi, Minatoku, 106, Tokyo, Japan

    N. Miura

  3. Department of Electronics, Osaka University, Yamada-oka, Suita City, 565, Osaka, Japan

    C. Hamaguchi

Authors
  1. K. Yamada
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  2. N. Miura
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  3. C. Hamaguchi
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Yamada, K., Miura, N. & Hamaguchi, C. Chaotic conductivity oscillation in n-Type Si in high magnetic fields. Appl. Phys. A 48, 149–153 (1989). https://doi.org/10.1007/BF01141277

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  • DOI: https://doi.org/10.1007/BF01141277

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