Abstract
We present an overview of recent progress in the theoretical modelling of nonlinear and chaotic dynamics induced by generation and recombination processes of charge carriers. Impact ionisation of impurities is the autocatalytic, i.e. destabilizing, step of three different physical mechanisms for spontaneous, self-sustained oscillations of the carrier density. The “restoring force” is furnished by one of the following three processes: (i) dielectric relaxation of the internal electric field, (ii) energy relaxation of the hot carriers, and (iii) trapping at impurities, where the discrete nature of the individual generationrecombination processes is taken into account.
Similar content being viewed by others
References
E. Schöll:Nonequilibrium Phase Transitions in Semiconductors. Self-Organization Induced by Generation and Recombination Processes. Springer Ser. Syn., Vol. 35 (Springer, Berlin, Heidelberg 1987)
M. Duong-Van (ed.): Proc. Int. Conf. on the Physics of Chaos and Systems far from Equilibrium. Nucl. Phys. B (Proc. Suppl.)2 (1987) J. Shah, G.J. Iafrate (eds.): Proc. 5th Int. Conf. on Hot Carriers in Semiconductors. Solid State Electron. 31 (1988)
K. Aoki, T. Kobayashi, K. Yamamoto: J. Physique Colloque C7, 51 (1981); J. Phys. Soc. Jpn.51, 2373 (1982)
G.N. Maracas, W. Porod, D.A. Johnson, D.K. Ferry, H. Goronkin: Physica134B, 276 (1985)
A. Brandi, T. Geisel, W. Prettl: Europhys. Lett.3, 401 (1987)
W. Knap, M. Jezewski, J. Lusakowski, W. Kuszko: Solid State Electron.31, 813 (1988)
S.W. Teitsworth, R.M. Westervelt, E.E. Haller: Phys. Rev. Lett.51, 825 (1983)
G.A. Held, C. Jeffries, E.E. Haller: Phys. Rev. Lett.52, 1037 (1984)
J. Peinke, A. Mühlbach, R.P. Huebener, J. Parisi: Phys. Lett.108A, 407 (1985)
S.B. Bumeliene, Yu.K. Pozhela, K.A. Pyragas, A.V. Tamaševičius: Proc. 4th Int. Conf. on Hot Electrons in Semiconductors, Innsbruck, Physica134B, 293 (1985)
D.G. Seiler, C.L. Littler, R.J. Justice, P.W. Milonni: Phys. Lett.108A, 462 (1985)
K. Yamada, N. Takara, H. Imada, N. Miura, C. Hamaguchi: Solid State Electron.31, 809 (1988)
E.G. Gwinn, R.M. Westervelt: Phys. Rev. Lett.57, 1060 (1986);59, 157 (1987)
U. Rau, J. Peinke, J. Parisi, R.P. Huebener, E. Schöll: Phys. Lett. A124, 335 (1987)
E. Schöll: InFestkörperprobleme (Advances in Solid State Physics) ed. by P. Grosse, Vol. 26 (Vieweg, Braunschweig 1986) p. 309
E. Schöll: J. Phys. Chem. Solids49, 651 (1988)
P.T. Landsberg: “Semiconductor Statistics”, inHandbook on Semiconductors, ed. by T. S. Moss, Vol. I, Chap. 8 (North-Holland, Amsterdam 1982)
W. Pickin: Solid State Electron.21, 309, 1299 (1978)
Y. Abe: Solid State Electron.31, 795 (1988)
P.T. Landsberg, A. Pimpale: J. Phys. C9, 1243 (1976)
E. Schöll: Ph. D. Thesis, University of Southampton (1978); Proc. Roy. Soc. A365, 511 (1979)
E. Schöll, P.T. Landsberg: Proc. R. Soc. (London) Ser. A365, 495 (1979)
P.T. Landsberg, D.J. Robbins, E. Schöll: Phys. Status Solidi (a)50, 423 (1978)
D.J. Robbins, P.T. Landsberg, E. Schöll: Phys. Status Solidi (a)65, 353 (1981)
E. Schöll: J. Physique C7, 57 (1981); Z. Phys. B46, 23 (1982); B48, 153 (1982)
E. Schöll: Solid State Electron.29, 687 (1986)
E. Schöll, P.T. Landsberg: Z. Phys. B (to be published) (1988)
E. Schöll: Z. Phys. B52, 321 (1983)
K.M. Mayer, J. Parisi, R.P. Huebener: Z. Phys. B (to be published)
D. Jäger, H. Baumann, R. Symanczyk: Phys. Lett. A117, 141 (1986)
K.M. Mayer, R. Gross, J. Parisi, J. Peinke, R.P. Huebener: Solid State Commun.63, 55 (1987)
E. Schöll: Z. Phys. B62, 245 (1986); Proc. 17th Int. Conf. Physics of Semiconductors (San Francisco 1984) ed. by J.D. Chadi, W. Harrison (Springer, New York 1985) p. 1353
E. Schöll, W. Heisel, W. Prettl: Z. Phys. B47, 285 (1982)
M. Weispfenning, I. Hoeser, W. Böhm, W. Prettl, E. Schöll: Phys. Rev. Lett.55, 754 (1985)
E. Schöll: Physica134B, 271 (1985); Phys. Rev. B34, 1395 (1986)
E. Schöll: Proc. 18th Int. Conf. Phys. Semicond. (Stockholm 1986), ed. by O. Engström (World Scientific, Singapore 1987) p. 1555
H. Haken:Synergetics, An Introduction, 3rd edn. (Springer, Berlin, Heidelberg 1983)
B. Röhricht, J. Parisi, J. Peinke, R.P. Huebener: Z. Phys. B66, 515 (1987)
A. Pimpale, P.T. Landsberg, L.L. Bonilla, M.G. Velarde: J. Phys. Chem. Sol.42, 873 (1981)
K.A. Pyragas: Sov. Phys.-Semicond.17, 652 (1983) [Fiz. Tekh. Poluprov.17, 1035 (1983)]
R.M. Westervelt, S.W. Teitsworth: J. Appl. Phys.57, 5457 (1985)
V.V. Mitin: Appl. Phys. A39, 123 (1986)
S.W. Teitsworth, R.M. Westervelt: Phys. Rev. Lett.53, 2587 (1984)
H.G. Schuster:Deterministic Chaos (Physik-Verlag, Weinheim 1984)
S.W. Teitsworth, R.M. Westervelt: Phys. Rev. Lett.56, 516 (1986)
M.P. Shaw, H.L. Grubin, P. Solomon:The Gunn-Hilsum Effect (Academic, New York 1979)
M.J. Feigenbaum: J. Stat. Phys.19, 25 (1978)
Z.N. Bartashevich, Yu.K. Pozhela, K.A. Pyragas, A.V. Tamaševičius, Yu.K. Ulbikas: Acta Phys. Hung. (1987)
K. Aoki, N. Mugibayashi, K. Yamamoto: Physica Scripta T14, 76 (1986); Proc. 18th Int. Conf. Phys. Semicond. (Stockholm 1986), ed. by O. Engström (World Scientific, Singapore 1987) p. 1543
V.V. Vladimirov, V.N. Gorshkov, P.M. Golovinskij: Sov. Phys.-Semicond.15, 894 (1981)
K. Blotekjaer: IEEE Trans. ED-17, 38 (1970)
G. Baccarani, M.R. Wordeman: Solid State Electron.28, 407 (1985)
E. Schöll, W. Quade: J. Phys. C20, L861 (1987)
E. Schöll: Solid State Electron.31, 539 (1988)
J.P. Nougier, J.C. Vaissiere, D. Gasquet, J. Zimmermann, E. Constant: J. Appl. Phys.52, 825 (1981)
L. Reggiani: Private communication
E. Schöll, J. Parisi, B. Röhricht, J. Peinke, R.P. Huebener: Phys. Lett. A119, 419 (1987)
E. Schöll: Unpublished
H. Naber, G. Hüpper: Unpublished
B. Röhricht, B. Wessely, J. Parisi, J. Peinke: Appl. Phys. Lett.48, 233 (1986)
N.N. Degtyarenko, V.F. Elesin, V.A. Furmanov: Sov. Phys. Semicond.7, 1147 (1974)
V.L. Bonch-Bruevich, Le Vu Ky: Phys. Stat. Solidi (b)124, 111 (1984)
B.S. Kerner, V.V. Osipov: Sov. Phys. JETP52, 1122 (1980)
A.L. Dubitskij, B.S. Kerner, V.V. Osipov: Sov. Phys. Semicond.20, 755 (1986)
P.T. Landsberg, E. Schöll, P. Shukla: Physica D30, 235 (1988)
N.G. van Kämpen:Stochastic Processes in Physics and Chemistry (North-Holland, Amsterdam 1981)
F. Schlögl, E. Schöll: Z. Phys. B71, 231 (1988)
J. Peinke, B. Röhricht, A. Mühlbach, J. Parisi, Ch. Nöldeke, R.P. Huebener, O.E. Rössler: Z. Naturforsch.40a, 562 (1985)
E. Schöll: Proc. 19th Int. Conf. Phys. Semicond., Warsaw 1988, ed. by M. Grynberg (to be published) D. Drasdo: Unpublished
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Schöll, E. Theoretical approaches to nonlinear and chaotic dynamics of generation-recombination processes in semiconductors. Appl. Phys. A 48, 95–106 (1989). https://doi.org/10.1007/BF01141271
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF01141271