Four-point probe resistivity measurements of dicing damage in (100) and (111) single crystal silicon wafers

Abstract

Dicing damage in single crystal Czochralski (Cz) silicon wafers ((100) and (111) n-type) with initial resistivities of 0.057 and 13.89 Ω cm was investigated by forming grooves at room temperature with dicing blades lubricated with de-ionized water. The grooves were purposely misoriented by 10 °, 20 °, and 30 ° relative to the [110]. The groove surfaces were examined by optical microscopy and scanning electron microscopy while the subsurface deformation was examined after bevel polishing. The subsurface damage was quantified by four-point probe measurements along the groove length including the bevelled region with the probe tips straddling the groove. The results show that the resistivity varies with position along the groove. A maximum increase on the resistivity of 9.7% for the (100) and 8.0% for the (111) was formed for a dicing blade misorientation of 20 °. Microscopy of the bevelled region shows that the damage is composed of microcracks: the depth is 0.122mm for the (100) and 0.186 mm for the (111) at the 20 ° blade misorientation.