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Reactions at the Al/SiO2/SiC layered interface

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Abstract

Electron spectroscopy and thermodynamic modelling have been used to examine reactions at the Al/SiO2/SiC layered interfaces at 800 °C. The reactions have been examined as a function of oxide thickness. Three regimes have been isolated: (i) where there is no oxide present aluminium and SiC react to produce Al4C3 and free silicon; (ii) where there is a thin oxide present the initial products are aluminosilicates and amorphous alumina; however, once the SiO2 is consumed, Al4C3 emerges as a product; (iii) where a thick oxide is present only aluminosilicate and alumina are formed.

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Authors and Affiliations

  1. Division of Materials Science and Technology, CSIRO, Locked Bag 33, 3168, Clayton, Vic., Australia

    A. E. Hughes, M. M. Hedges & B. A. Sexton

Authors
  1. A. E. Hughes
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  2. M. M. Hedges
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  3. B. A. Sexton
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Hughes, A.E., Hedges, M.M. & Sexton, B.A. Reactions at the Al/SiO2/SiC layered interface. J Mater Sci 25, 4856–4865 (1990). https://doi.org/10.1007/BF01129953

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