Skip to main content
SpringerLink
Log in

Behaviour of B-N-Si under high pressure and high temperature

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

The phase relations of the B-N-Si system have been studied using a quenching method up to 10GPa and 2000 °C using a high-pressure apparatus of the octahedral anvil type. Pressure-temperature conditions for obtaining z-BN (diamond analogue of boron nitride) were delineated for turbostratic BN (t-BN), t-BN/amorphous Si3N4 and t-BN/β-Si3N4. These conditions shift toward higher regimes of temperature as amorphous Si3N4 or β-Si3N4 is incorporated into t-BN. Spontaneous sintering occurringin situ at high pressure yields z-BN-based composite compacts.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. “Frontiers in Materials Technologies”, edited by M. A. Meyers and O. T. Inal (Elsevier, Amsterdam, 1985).

    Google Scholar 

  2. A. Onodera, N. Takahashi, H. Yoshihara, H. Nakae, Y. Matsunami andT. Hirai,J. Mater. Sci. 25 (1990) in press.

  3. R. H. Wentorf Jr., R. C. DeVries andF. P. Bundy,Science 208 (1980) 873.

    Google Scholar 

  4. J. Thomas Jr, N. E. Weston andT. E. O'Conner,J. Amer. Chem. Soc. 84 (1963) 4619.

    Google Scholar 

  5. T. Matsuda, H. Nakae andT. Hirai,J. Mater. Sci. 21 (1986) 649.

    Google Scholar 

  6. H. Nakae, Y. Matsunami, N. Uno, T. Matsuda andT. Hirai, in “Proceedings of the 5th European Conference on Chemical Vapour Deposition”, edited by J.-O. Carlsson and J. Lindström, (Uppsala University, Uppsala, 1985) p. 242.

    Google Scholar 

  7. M. J. Rand andJ. F. Roberts,J. Electrochem. Soc. 115 (1968) 428.

    Google Scholar 

  8. N. Wada, S. A. Solin, J. Wong andS. Prochazka,J. Noncryst. Solids 43 (1981) 7.

    Google Scholar 

  9. H. Nakae, Y. Matsunami andT. Hirai, unpublished.

  10. N. Kawai, M. Togaya andA. Onodera,Proc. Jpn. Acad. 47 (1974) 623.

    Google Scholar 

  11. A. Onodera,High Temp. High Press. 19 (1987) 579.

    Google Scholar 

  12. A. Ohtani, S. Mizukami, M. Katayama, A. Onodera andN. Kawai,Jpn. J. Appl. Phys. 16 (1977) 1843.

    Google Scholar 

  13. A. Onodera andA. Ohtani,J. Appl. Phys. 51 (1980) 2581.

    Google Scholar 

  14. S. Sasakura, K. Suito andH. Fujisawa, in “High Pressure Science and Technology”, Vol. 2, edited by N. V. Novikov (Naukova Dumka, Kiev, 1989) p. 60.

    Google Scholar 

  15. K. Niihara, R. Morena andD. P. H. Hasselman,J. Mater. Sci. Lett. 1 (1982) 13.

    Google Scholar 

  16. I. S. Gladkaya, G. N. Kremkova andV. N. Slesarev,J. Less-Common Metals 117 (1986) 241.

    Google Scholar 

  17. N. N. Sirota andN. A. Kofman,Sov. Phys. Doklady 24 (1979) 1001.

    Google Scholar 

  18. H. Sumiya, T. Iseki andA. Onodera,Mater. Res. Bull. 18 (1983) 1203.

    Google Scholar 

  19. K. Ichinose, M. Wakasuki, T. Aoki andY. Maeda, in “Proceedings of the 4th International Conference on High Pressure”, edited by J. Osugi (Physicochemical Society of Japan, Kyoto, 1974) p. 436.

    Google Scholar 

  20. A. Onodera, H. Sumiya, N. Takahashi, K. Higashi, R. Ohshima, H. Saka, K. Nobugai andF. Kanamaru, in preparation.

  21. B. D. Cullity, “Elements of X-ray Diffraction” (Addison-Wesley, Reading, 1956).

    Google Scholar 

  22. R. C. DeVries, “Cubic Boron Nitride: Handbook of Properties”, GE Technical Report 72CRD178 (1972).

  23. S. Hirano, S. Hon andS. Naka, in “High Pressure Science and Industry”, edited by C.-M. Backman, T. Johannisson and L. Tegnér (Arkitektkopia, Uppsala, 1982) p. 376.

    Google Scholar 

  24. E. Rapoport, K. Sato andS. Sawaoka,ibid.in “ p. 384.

    Google Scholar 

  25. B. K. Agarwala, B. P. Singh andS. K. Singhal,J. Mater. Sci. 7 (1986) 1765.

    Google Scholar 

  26. M. Wakatsuki, K. Ichinose andT. Aoki,Mater. Res. Bull. 7 (1972) 999.

    Google Scholar 

  27. A. Sawaoka, S. Saito andM. Araki, in “High Pressure Science and Technology”, Vol. 1, edited by K. D. Timmerhaus and M. S. Barber (Plenum, New York, 1979) p. 986.

    Google Scholar 

  28. S. Saito andA. Sawaoka, in “High Pressure Science and Technology”, Vol. 2, edited by B. Vodar and Ph. Marteau (Pergamon, London, 1981) p. 541.

    Google Scholar 

  29. S. Prochazka andW. A. Rocco,High Temp. High Press. 10 (1978) 87.

    Google Scholar 

  30. W. Pompe, H. A. Bari, G. Gille, W. Kreher, B. Scultrich andH.-J. Weiss, in “Current Topics in Material Science”, Vol. 12, edited by E. Kaldis (Elsevier, Amsterdam, 1985) Ch. 4.

    Google Scholar 

  31. J. T. Neil,Mater. Engng March (1984) 36.

  32. V. I. Matkovich,Acta Crystallogr. 13 (1960) 679.

    Google Scholar 

  33. D. Harde andK. H. Jack,Nature 160 (1957) 332.

    Google Scholar 

  34. M. Shimada, N. Ogawa, M. Koizumi, F. Dachille andR. Roy,Amer. Ceram. Soc. Bull. 58 (1979) 519.

    Google Scholar 

  35. T. Yamada, T. Tanaka, M. Shimada andM. Koizumi,J. Mater. Sci. Lett. 1 (1982) 455.

    Google Scholar 

  36. F. P. Bundy andR. H. Wentorf Jr,J. Chem. Phys. 38 (1963) 1144.

    Google Scholar 

  37. M. Wakatsuki andK. Ichinose, in “Proceedings of the 4th International Conference on High Pressure”, edited by J. Osugi (Physicochemical Society of Japan, Kyoto, 1974) p. 441.

    Google Scholar 

  38. I. N. Frantsevich, T. P. Balan, A. V. Bochko, S. S. Dzhmarov, G. G. Karyuk, A. V. Kurdyumov andA. U. Pilyankevich,Dokl. Akad. Nauk SSSR 218 (1974) 591.

    Google Scholar 

  39. A. Onodera, K. Inoue, H. Yoshihara, H. Nakae, T. Matsuda andT. Hirai,J. Mater. Sci. 25 (1990) in press.

  40. F. R. Corrigan andF. P. Bundy,J. Chem. Phys. 63 (1975) 3812.

    Google Scholar 

Download references

Author information

Author notes

  1. H. Yoshihara

    Present address: Chemical Todgosei Industry Co., Minato, 455, Nagoya, Japan

  2. H. Nakae

    Present address: Furukawa Electric Co., Chiyoda, 100, Tokyo, Japan

  3. Y. Matsunami

    Present address: Japan Metals and Chemicals Co., Tsukuba, 305, Ibaraki, Japan

Authors and Affiliations

  1. Faculty of Engineering Science, Osaka University, Toyonaka, 560, Osaka, Japan

    H. Yoshihara, A. Onodera & K. Suito

  2. Research Development Corporation of Japan, Chiyoda, 100, Tokyo, Japan

    H. Nakae & Y. Matsunami

  3. Institute for Materials Research, Tohoku University, Aoba, 980, Miyagi, Japan

    T. Hirai

Authors
  1. H. Yoshihara
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Onodera
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. K. Suito
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Nakae
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Y. Matsunami
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. T. Hirai
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yoshihara, H., Onodera, A., Suito, K. et al. Behaviour of B-N-Si under high pressure and high temperature. J Mater Sci 25, 4595–4603 (1990). https://doi.org/10.1007/BF01129912

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF01129912

Keywords

Search

Navigation